VN2410
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 Ohm
制造商:
产品信息
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
应用案例
LEM国产替代 | 芯森VN系列电压传感器介绍
2023-06-09
紫光展锐重磅推出联通第二代5G芯片CPE VN007+系列
2020-11-30
飒特红外GK640-VN工业测温监控热像仪的应用场景
2025-08-15
中国联通推出千元以下的5G CPE VN007,同时支持4G /5G无线及有线
2020-02-27
工业「防错检测」新选择!思谋全新VN800智能视觉传感器正式发布
2022-09-01
紫光展锐联合中国联通推出联通5G CPE VN007 售价999元
2020-02-26
以太网开发测试利器VN5000系列硬件设计
2022-07-29
吉时利数字源表2410故障维修案例
2022-04-26