VN0606
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 3.0 Ohm
制造商:
产品信息
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
技术资料
应用案例
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广和通联合中国联通、紫光展锐正式发布LTE Cat.1 bis模组雁飞VN200
2023-03-02
【车载以太网案例】全新100/1000BASE-T1 IOP测试解决方案
2022-08-04
广和通联合中国联通、紫光展锐正式发布LTE Cat.1 bis模组雁飞VN200
2023-03-02
【车载以太网案例】全新100/1000BASE-T1 IOP测试解决方案
2022-08-04