VN0109
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 90V, 3.0 Ohm
制造商:
产品信息
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
在线购买
型号:VN0109N3-G
描述:-
应用案例
中国联通推出千元以下的5G CPE VN007,同时支持4G /5G无线及有线
2020-02-27
紫光展锐联合中国联通推出联通5G CPE VN007 售价999元
2020-02-26
VNA106/VNA108矢量网络分析仪的性能特点及应用范围
2021-01-29
NFV和VNF的现状分析
2020-04-25
飒特红外CK350-VN热成像变电站辅助监控系统的应用案例
2023-11-20
基于以太网网络接口卡VN5600A的CSM数采设备与CANape、CANoe的配置方案
2023-10-16
射频领域中S参数为何大行其道?
2024-03-01
9月20日直播|Vector常用硬件接口卡的实际应用
2023-09-13