TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

  High input impedance

  Low threshold (-2.4V max.)

  Low input capacitance (110pF max.)

  Fast switching speeds

  Low on-resistance

  Low input and output leakage

  Free from secondary breakdown