The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI_F/dt.turboswitch“H”是由两个串联的300V骰子超高性能二极管。turboswitch“H”家庭大幅削减损失相关的MOSFET当运行在高性/药物疗法。

Key Features

• ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS

• DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS

• INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES

• INSULATION (2500V_RMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK

• STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN

• PACKAGE CAPACITANCE: C=16pF

主要特点

尤其适合作为升压二极管在连续模式功率因数校正器和硬开关条件

专为高di/dt操作。超高速恢复电流与SiC器件的竞争。允许MOSFET和散热器裁员

内部的陶瓷绝缘装置为300V二极管相同温度条件

绝缘（2500vrms）允许放置在相同的散热器作为MOSFET和灵活的共同或单独的散热片散热

静态和动态平衡的内部二极管是必要的设计

封装的电容：C = 16PF