This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized Q_RR(6.5 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the V_F/Q_RRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.

The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.

Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.

该器件是600伏串联二极管的第二代的一部分。它具有超低的开关损耗和减少Qrr（NC 6.5），使得它非常适合使用在电路工作在硬开关模式。特别是室颤/ qrrtrade OFF位置标准超快二极管和碳化硅肖特基整流器在价格/性能比的条款之间的装置。

该设备提供了一个新的定位，让更多的灵活性，电源电路设计人员在寻找良好的性能，同时还尊重成本约束。

具有圣的涡轮增压600 2伏技术，该设备是特别适合作为升压二极管在连续导通模式功率因数校正电路。

Key Features

• High voltage rectifier

• Tandem diodes in series

• Very low switching losses

• Insulated device with internal ceramic

• Equal thermal conditions for both 300 V diodes

• Static and dynamic equilibrium of internal diodes are warranted by design

• Insulated package:

• Capacitance: 7 pF

• Insulated voltage: 2500 V rms

主要特点

高压整流器

串联串联二极管

极低的开关损耗

内瓷绝缘装置

相等的热条件为300伏二极管

静态和动态平衡的内部二极管是必要的设计

绝缘包：

电容：7

绝缘电压：2500伏均方根