These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics.

The recovery characteristics are independent of the temperature.

Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.

这些二极管是使用碳化硅衬底制造的。这种宽禁带材料支持一个高电压等级的肖特基二极管结构的制造。这种二极管表现出无或可忽略不计的恢复特性。

恢复特性是独立的温度。

使用这些二极管将大幅降低开关的MOSFET功率损失，从而提高了程序的整体效率。这些二极管将在硬开关条件下优于功率因数校正电路。

Key Features

• No reverse recovery

• Switching behavior independent of temperature

• Dedicated to PFC boost diode

主要特点

无反向恢复

温度开关行为

专用PFC升压二极管