The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

碳化硅二极管是一种超高性能的功率肖特基二极管。它是使用碳化硅衬底制造的。宽禁带材料允许的肖特基二极管结构的设计与650伏的评级。由于肖特基结构，没有恢复被证明在关断和铃声模式是可以忽略不计。最小的电容关断行为是独立的温度。

特别适合使用在PFC应用，这将促进ST SiC二极管在硬开关条件下的性能。它的高正向浪涌能力，保证了良好的鲁棒性，在暂态阶段。

Key Features

• No reverse recovery charge in application current range

• Switching behavior independent of temperature

• Dedicated to PFC applications

• High forward surge capability

• Insulated package: TO-220AC Ins

• Insulated voltage: 2500 V_RMSsine

• Typical package capacitance: 7 pF

主要特点

在应用程序电流范围内没有反向恢复充电

温度开关行为

致力于PFC的应用

高正向浪涌能力

绝缘包装：to-220ac INS

绝缘电压：2500 vrmssine

典型封装电容：7