The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

碳化硅二极管是一种超高性能的功率肖特基二极管。它是使用碳化硅衬底制造的。宽禁带材料允许的肖特基二极管结构的设计与600伏的评级。由于肖特基结构没有恢复是在关断和铃声模式显示可以忽略不计。最小的电容关断行为是独立的温度。

ST SiC二极管将促进在硬开关条件下PFC操作的性能。

Key Features

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Particularly suitable in PFC boost diode function

主要特点

没有或可以忽略不计的反向恢复

温度开关行为

在PFC升压二极管功能特别适合