元器件型号、描述、参数

NXH80B120H2Q0SG

 Power Integrated Module, SiC Diode + IGBT, 1200 V, 40 A

制造商：ON

中文资料及数据手册

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产品信息

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
  • Thermistor

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技术资料

应用案例