The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.For isolated applications, the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.

• High Peak Output Current with Split Output Stages
• Extended Positive Voltage Rating up to 28 V Max
• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
• Accessible 5 V Reference / Bias Rail
• Adjustable Under−Voltage Lockout
• Fast Desaturation Function
• QFN24 Package 4 x 4 mm