N01S830
Serial SRAM Memory, 1 Mb, Ultra-Low-Power, 2.5 to 5.5 V
制造商:ON
产品信息
The ON Semiconductor serial SRAM family includes severalintegrated memory devices including this 1 Mb serially accessedStatic Random Access Memory, internally organized as 128 K wordsby 8 bits. The devices are designed and fabricated usingON Semiconductor’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory. The devices can operate over a wide temperature range of−40°C to +85°C and are available in a 8-lead TSSOP package. TheN01S830xA device has two different variations, a HOLD version thatallows communication to the device to be paused and a batteryback-up (BBU) version to be used with a battery to retain data whenpower is lost.
- 2.5 to 5.5 V
- - Single-bit SPI Access - DUAL-bit and QUAD-bit SPI-like Access
- - Word Mode- Page Mode - Burst Mode (Full Array)
- - Clock Frequency 20 MHz
- - HOLD Pin for Pausing Operation
- - VBAT Pin for Battery−Back up
- Built-in Write Protection (CS High)
- - Unlimited Write Cycles
电路图、引脚图和封装图
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型号:N01S830HAT22IT
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型号:N01S830HAT22I
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型号:N01S830BAT22I
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型号:N01S830HAT22ET
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型号:N01S830HAT22E
描述:-
型号:N01S830BAT22IT
描述:-