元器件型号、描述、参数

MJE253

 4.0 A, 100 V PNP Bipolar Power Transistor

制造商：ON

中文资料及数据手册

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产品信息

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
  • High Collector-Emitter Sustaining Voltage -
  • V
  • = 100 Vdc (Min)MJE243, MJE253
  • High DC Current Gain @ I
  • = 200 mAdc
  • h
  • = 40-200
  • h
  • = 40-120 -MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage -
  • V
  • = 0.3 Vdc (Max) @ I
  • = 500 mAdc
  • High Current Gain Bandwidth Product -
  • f
  • = 40 MHz (Min) @ I
  • = 100 mAdc
  • Annular Construction for Low Leakages
  • I
  • = 100 nAdc (Max) @ Rated V
  • Pb-Free Packages are Available

电路图、引脚图和封装图

    MJE253电路图

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    技术资料

    应用案例