MJE243
4.0 A, 100 V NPN Bipolar Power Transistor
制造商:ON
产品信息
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
- High Collector-Emitter Sustaining Voltage -
- V
- = 100 Vdc (Min)MJE243, MJE253
- High DC Current Gain @ I
- = 200 mAdc
- h
- = 40-200
- h
- = 40-120 -MJE243, MJE253
- Low Collector-Emitter Saturation Voltage -
- V
- = 0.3 Vdc (Max) @ I
- = 500 mAdc
- High Current Gain Bandwidth Product -
- f
- = 40 MHz (Min) @ I
- = 100 mAdc
- Annular Construction for Low Leakages
- I
- = 100 nAdc (Max) @ Rated V
- Pb-Free Packages are Available