元器件型号、描述、参数

MJD253

 4.0 A, 100 V PNP Bipolar Power Transistor

制造商：ON

中文资料及数据手册

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产品信息

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
  • Collector-Emitter Sustaining Voltage
  • V
  • = 100 Vdc (Min) @ I
  • = 10 mAdc
  • High DC Current Gain
  • h
  • = 40 (Min) @ I
  • = 200 mAdc
  • h
  • = 15 (Min) @ I
  • = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
  • V
  • = 0.3 Vdc (Max) @ I
  • = 500 mAdc
  • V
  • = 0.6 Vdc (Max) @ I
  • = 1.0 Adc
  • High Current-Gain-Bandwith Product -
  • f
  • = 40MHz (Min) @ I
  • = 100 mAdc
  • Annular Construction for Low Leakage -
  • I
  • = 100 nAdc @ Rated V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages

电路图、引脚图和封装图

    MJD253电路图

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    技术资料

    应用案例