MJD253
4.0 A, 100 V PNP Bipolar Power Transistor
制造商：ON
产品信息
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
- Collector-Emitter Sustaining Voltage
- V
- = 100 Vdc (Min) @ I
- = 10 mAdc
- High DC Current Gain
- h
- = 40 (Min) @ I
- = 200 mAdc
- h
- = 15 (Min) @ I
- = 1.0 Adc
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Low Collector-Emitter Saturation Voltage -
- V
- = 0.3 Vdc (Max) @ I
- = 500 mAdc
- V
- = 0.6 Vdc (Max) @ I
- = 1.0 Adc
- High Current-Gain-Bandwith Product -
- f
- = 40MHz (Min) @ I
- = 100 mAdc
- Annular Construction for Low Leakage -
- I
- = 100 nAdc @ Rated V
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These are PbFree Packages
电路图、引脚图和封装图
MJD253电路图
在线购买
型号：MJD253-001
描述：-
型号：MJD253T4
描述：-
型号：MJD253-1G
描述：-
型号：MJD253T4G
描述：-
型号：NJVMJD253T4G
描述：-