MJD112
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
制造商：ON
产品信息
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Surface Mount Replacements for TIP110-TIP117 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current Gainh
- = 2500 (Typ) @ I
- = 2.0 Adc
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- PbFree Packages are Available
电路图、引脚图和封装图
MJD112电路图
在线购买
型号：MJD112RL
描述：-
型号：MJD112T4
描述：-
型号：MJD112-001
描述：-
型号：NJVMJD112G
描述：-
型号：NJVMJD112T4G
描述：-
型号：MJD112G
描述：-