元器件型号、描述、参数

MJ21196

 Bipolar Transistor, NPN, 250 V, 16 A

制造商：ON

中文资料及数据手册

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产品信息

The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - h
  • = 25 Min @ I
  • = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available

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技术资料

应用案例