These enhancement-mode (normally-off) transistors utilize a lateral MOS structure andwell-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.

  Ultra-low threshold

  High input impedance

  Low input capacitance

  Fast switching speeds

  Low on-resistance

  Freedom from secondary breakdown

  Low input and output leakage