The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizinglateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

  Free from secondary breakdown

  Low power drive requirement

  Ease of paralleling

  Excellent thermal stability

  Integral source-drain diode

  High input impedance and low CISS

  ESD gate protection