The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, R
, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.

• High Speed Performance ~ 30kHz
• Current Transfer Ratio: 100% to 600%
• Minimum BV
• of 40V Guaranteed
• Safety and Regulatory Approvals:
• UL1577, 5,000 VAC
• for 1 Minute
• DIN EN/IEC60747-5-5, 850V Peak Working Insulation Voltage