FDPF8D5N10C
N-Channel Shielded Gate PowerTrench
制造商：ON
产品信息
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench
process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
- Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
- High Performance Trench Technology for Extremely Low RDS(on)
- Extremely Low Reverse Recovery Charge, Qrr
- Low Gate Charge, QG = 25nC ( Typ.)
- High Power and Current Handling Capability
- 100% UIL Tested
- RoHS Compliant
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型号：FDPF8D5N10C
描述：-