This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench
process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

• Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
• High Performance Trench Technology for Extremely Low RDS(on)
• Extremely Low Reverse Recovery Charge, Qrr
• Low Gate Charge, QG = 25nC ( Typ.)
• High Power and Current Handling Capability
• 100% UIL Tested
• RoHS Compliant