元器件型号、描述、参数

FDP4D5N10C

 N-Channel Shielded Gate PowerTrench

制造商：ON

中文资料及数据手册

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产品信息

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench
process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
  • Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
  • High Performance Trench Technology for Extremely Low RDS(on)
  • Extremely Low Reverse Recovery Charge, Qrr
  • Low Gate Charge, QG = 48nC ( Typ.)
  • High Power and Current Handling Capability
  • 100% UIL Tested
  • RoHS Compliant

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技术资料

应用案例