FCPF600N60ZL1

 N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ

制造商:ON

中文资料及数据手册

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产品信息

SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • 650 V at TJ = 150°C
  • Max. RDS(on) = 600 mΩ
  • Ultra Low Gate Charge ( Typ. Qg = 20 nC )
  • Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )
  • 100% Avalanche Tested
  • ESD Improved Capacity

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技术资料

应用案例