DN3765
MOSFET, DEPLETION-MODE, 650V, 8.0 Ohm
制造商:
产品信息
This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High inputimpedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
在线购买
型号:DN3765K4-G
描述:-