2N6338

25 A, 100 V High Power NPN Bipolar Power Transistor

制造商：ON

中文资料及数据手册

The Power 25A 150 VBipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.

High Collector-Emitter Sustaining Voltage
V
= 100 Vdc (Min)2N6338
V
= 150 Vdc (Min) - 2N6341
High DC Current Gain
h
= 30 - 120 @ I
= 10 Adc
h
= 12 (Min) @ I
= 25 Adc
Low Collector-Emitter Saturation Voltage
V
= 1.0 Vdc (Max) @ I
= 10 Adc
Fast Switching Times @ I
= 10 Adc
t
= 0.3 µs (Max)
t
= 1.0 µs (Max)
t
= 0.25 µs (Max)
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.