The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

• High DC Current Gain -
• h
• = 2000 (Typ) @ I
• = 2.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc
• V
• = 60 Vdc (Min) - 2N6035, 2N6038
• V
• = 80 Vdc (Min) - 2N6036, 2N6039
• Forward Biased Second Breakdown Current Capability
• I
• = 1.5 Adc @ 25 Vdc
• Monolithic Construction with Built-in Base-Emitter
• Resistors to Limit Leakage Multiplication
• Space-Saving High Performance-to-Cost Ratio
• TO-225AA Plastic Package
• Pb-Free Packages are Available